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2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
PRECHARGE Command
Following an auto precharge operation, an ACTIVATE command can be issued to the
same bank if the following two conditions are satisfied simultaneously:
? The RAS precharge time ( t RP) has been satisfied from the clock at which the auto pre-
charge begins.
? The RAS cycle time ( t RC) from the previous bank activation has been satisfied.
Figure 51: READ Burst with Auto Precharge – RL = 3, BL = 4, RU( t RTP(MIN)/ t CK) = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK#
CK
BL/2
RL = 3
CA[9:0]
Bankm
col addr a
Col addr a
Bankm
row addr
Row addr
t RTP
t RPpb
CMD
READ w/AP
NOP
NOP
NOP
NOP
ACTIVATE
NOP
NOP
NOP
DQS#
DQS
DQ
D OUT A0
D OUT A1
D OUT A2
D OUT A3
Transitioning data
WRITE Burst with Auto Precharge
If AP (CA0f) is HIGH when a WRITE command is issued, the WRITE with auto precharge
function is engaged. The device starts an auto precharge at the clock rising edge t WR
cycles after the completion of the burst WRITE.
Following a WRITE with auto precharge, an ACTIVATE command can be issued to the
same bank if the following two conditions are met:
? The RAS precharge time ( t RP) has been satisfied from the clock at which the auto pre-
charge begins.
? The RAS cycle time ( t RC) from the previous bank activation has been satisfied.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
72
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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